SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC APPARATUS

摘要

The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing.;A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.

主权项

1. An imaging device, comprising:
a semiconductor substrate including:
first and second photoelectric conversion units, anda trench disposed between the first photoelectric conversion unit and the second photoelectric conversion unit; an insulating film disposed at a light-receiving side of the semiconductor substrate; and a light-shielding portion, wherein,
the first photoelectric conversion unit is adjacent to the second photoelectric conversion unit,the insulating film includes a substantially V-shaped portion at a location corresponding the trench, andthe light-shielding portion is disposed above the substantially V-shaped portion of the insulating film.