发明名称 |
Method to self-align a lithographic pattern to a workpiece |
摘要 |
A method to self-align a lithographic pattern to a workpiece, the method including the steps of obtaining a workpiece having a predetermined pattern of features; modifying at least some of the features so that when a photoresist material is applied to the pattern, there is a substantial difference in reflectivity between two adjacent features, at least one of which has been modified; applying a photoresist material; masklessly exposing the photoresist material; developing the photoresist material, the substantial difference in reflectivity of the two adjacent features causing the developed photoresist material to reveal one adjacent feature but not the other.
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申请公布号 |
US6485894(B1) |
申请公布日期 |
2002.11.26 |
申请号 |
US20000675250 |
申请日期 |
2000.09.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AKATSU HIROYUKI;ZACH FRANZ X. |
分类号 |
G03F7/00;G03F7/20;(IPC1-7):G03C5/56 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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