A method for producing a silicon single crystal and the silicon single crystal produced thereby

摘要

There is disclosed that in production of a silicon single crystal by Czochralski method, a method for producing a silicon single crystal by growing the silicon single crystal characterized in that a pulling rate of the single crystal is gradually increased during formation of a tail part after formation of a predetermined diameter part of the single crystal, and a method for producing a silicon single crystal wherein length t of a tail part is defined to be a or more, wherein a represents a distance from the tip end of the tail part to a position of the extraordinary oxygen precipitation area when the tail part is formed after the predetermined diameter part is grown, and the silicon single crystal produced by the methods. There is provided a method for producing a silicon single crystal characterized in that productivity and yield of the silicon single crystal are improved by preventing the rapid change in temperature while the single crystal is separated from the melt in the tailing process to suppress generation of the area where the amount of precipitated oxygen is extraordinarily large and the OSF ring due to rapid increase in temperature when tail part is formed, in the predetermined diameter part near the tail part, and the silicon single crystal produced by the method.