| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose power line wiring resistance is small. SOLUTION: On this DRAM (dynamic random access memory) chip, a polysilicon wiring layer (p-Si) is used to form a line 3 of an external ground voltage ext.VSS, and first and second aluminum wiring layers (Al1, Al2) are used to form lines 4 and 5 of an external power voltage ext.VCC. Accordingly, as compared to the conventional way that the first aluminum wiring layer (Al1) has been used to form a line 76 of the external ground voltage ext.VSS, and the second aluminum wiring layer (Al2) has been used to form a line 77 of the external power voltage ext.VCC, the line wiring resistance value of the external power voltage ext.VCC can be reduced. COPYRIGHT: (C)2005,JPO&NCIPI |
