| 摘要 |
PROBLEM TO BE SOLVED: To improve a semiconductor device in positional accuracy and heat dissipating properties by a method wherein a frame formed of material high in heat dissipating effect is fixed around the semiconductor device without using a bonding means. SOLUTION: An adhesive layer 13 is provided to a part of a metal frame 20 which is bonded to the primary surface of an insulating film 11. A bump electrode 19 serving as an outer connection terminal is provided to the other primary surface of the insulating film 11 supported by the metal frame 20. At this point, the thermal expansion coefficient of material which forms the semiconductor device 10 is made smaller than that of material which forms the metal frame 20. The metal frame 20 is fitted to the semiconductor device 10 after the device is expanded by heating and then cooled down to a room temperature. By this setup, the metal frame 20 shrinks to be smaller than the semiconductor device 10, so that the metal frame 20 abuts against the semiconductor device 10 to retain it with its shrinkage force. |
