| 摘要 |
PURPOSE:To speed up the action of the FET by the decrease in the capacitance between a substrate and each electrode by a method wherein the substrate is isolated from an epitaxial layer as the channel region by an oxide injected layer as an insulation layer. CONSTITUTION:Oxygen ions are implanted to the surface of a semiconductor substrate 1, and a high-resistant layer 2 is formed by activating oxygen atoms by heat treatment. Next, the epitaxial layer 3 is grown on a layer 2 as the insulation layer, and Pt for Schottky junction is evaporated and pattern-formed, resulting in the formation of a gate electrode 4. Successively, an Si nitride film 5 is evaporated over the entire surface by the pressure reduction CVD method, and the film 5 is left only on the side surface of the electrode 4 by etching this film 5. Then, a high concentration N type layer 6 is formed by boron implantation in self-alignment by using the electrode 4 and the film as an implantation- preventing film. The substrate 1 is isolated from the layer 3 as the channel region by the layer 2, the capacitance between the substrate 1 and each electrode being decreased, and the action of the FET being then accelerated in speed. |
