发明名称 |
Cross-Point Memory Cells, Non-Volatile Memory Arrays, Methods of Reading a Memory Cell, Methods of Programming a Memory Cell, Methods of Writing to and Reading from a Memory Cell, and Computer Systems |
摘要 |
Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line. |
申请公布号 |
US2016358641(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
US201615237434 |
申请日期 |
2016.08.15 |
申请人 |
Micron Technology, Inc. |
发明人 |
Meade Roy E. |
分类号 |
G11C11/24;G11C11/56;H01L49/02;H01L45/00;H01L27/10;G11C11/34;G11C13/00 |
主分类号 |
G11C11/24 |
代理机构 |
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代理人 |
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主权项 |
1. A cross-point memory cell comprising:
a word line extending in a first direction; a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other; and a capacitor capable of being repeatedly programmed to at least two different capacitance states formed between the word line and the bit line where such cross, the capacitor comprising a capacitor dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line. |
地址 |
Boise ID US |