Reverse tone self-aligned contact

摘要

Some embodiments of the present disclosure relate to a method to form a source/drain self-aligned contact to a transistor or other semiconductor device. The method comprises forming a pair of gate structures over a substrate, and forming a source/drain region between the pair of gate structures. The method further comprises forming a sacrificial source/drain contact which is arranged over the source/drain region and which is arranged laterally between neighboring sidewalls of the pair of gate structures. The method further comprises forming a dielectric layer which extends over the sacrificial source/drain contact and over the pair of gate structures. The dielectric layer differs from the sacrificial source/drain contact. The method further comprises removing a portion of the dielectric layer over the sacrificial source/drain contact and subsequently removing the sacrificial source/drain contact to form a recess, and filling the recess with a conductive material to form a source/drain contact.

主权项

1. A method, comprising:
forming a sacrificial material around and above a pair of gate structures, wherein a source/drain region is arranged between the pair of gate structures; removing the pair of gate structures to form a pair of cavities within the sacrificial material; filling the pair of cavities with a gate material to form a pair of replacement gate structures; forming a sacrificial source/drain contact between the pair of replacement gate structures; forming a dielectric layer over the sacrificial source/drain contact and over the pair of replacement gate structures; sequentially etching both the sacrificial source/drain contact and the dielectric layer to form a recess that extends through the sacrificial material; and filling the recess with a conductive material to form a source/drain contact that is electrically coupled to the source/drain region.