Operational Gallium Nitride devices

摘要

A power circuit is described that includes a semiconductor body having a common substrate and a Gallium Nitride (GaN) based substrate. The GaN based substrate includes one or more GaN devices adjacent to a front side of the common substrate. The common substrate is electrically coupled to a node of the power circuit. The node of the power circuit is at a particular potential that is equal to, or more negative than, a potential at one or more load terminals of the one or more GaN devices.

主权项

1. A power circuit comprising:
two or more input terminals that are each directly coupled to a source that is configured to produce power for a load; two or more output terminals that are each directly coupled to the load; a semiconductor body, the semiconductor body comprising:
a common substrate; anda Gallium Nitride (GaN) based substrate including one or more GaN devices adjacent to a front side of the common substrate, wherein the one or more GaN devices comprise one or more gate terminals configured to receive a gate control signal from one or more drivers and one or more load terminals; and a node electrically coupled to a back side of the common substrate, wherein the node is connected to a constant potential that is equal to or more negative than a lowest potential at the two or more output terminals of the power circuit.