| 发明名称 | Semiconductor light-emitting device | ||
| 摘要 | A semiconductor light-emitting device comprises an epitaxial structure comprising a first semiconductor stack, a second semiconductor stack, and an active layer between the first semiconductor stack and second semiconductor stack for emitting a light; and a main light-extraction surface on the first semiconductor stack, wherein the light passes through the main light-extraction surface. The main light-extraction surface comprises a first light-extraction region, a second light-extraction region, and a maximum near-field luminous intensity. The distribution of the near-field luminous intensity in the first light-extraction region is between 70% and 100% of the maximum near-field luminous intensity, the distribution of the near-field luminous intensity in the second light-extraction region is between 0% and 70% of the maximum near-field luminous intensity. A ratio of an area of the first light-extraction region to an area of the second light-extraction region is between 0.25 and 0.45. | ||
| 申请公布号 | US9490394(B2) | 申请公布日期 | 2016.11.08 |
| 申请号 | US201614996744 | 申请日期 | 2016.01.15 |
| 申请人 | EPISTAR CORPORATION | 发明人 | Chiu Hsin-Chih;Chen Shih-I;Lu Chih-Chiang |
| 分类号 | H01L33/00;H01L33/22;H01L33/38;H01L33/40;H01L33/42;H01L33/30;H01L33/50 | 主分类号 | H01L33/00 |
| 代理机构 | Patterson + Sheridan, LLP | 代理人 | Patterson + Sheridan, LLP |
| 主权项 | 1. A semiconductor light-emitting device comprising: an epitaxial structure comprising a first semiconductor stack, a second semiconductor stack, and an active layer between the first semiconductor stack and the second semiconductor stack for emitting a light; and a main light-extraction surface on the first semiconductor stack, wherein the light passes through the main light-extraction surface, wherein the main light-extraction surface comprises a first light-extraction region, a second light-extraction region and a maximum near-field luminous intensity, wherein the near-field luminous intensity distributing in the first light-extraction region is between 70% and 100% of the maximum near-field luminous intensity, the near-field luminous intensity distributing in the second light-extraction region is between 0% and 70% of the maximum near-field luminous intensity, and a ratio of an area of the first light-extraction region to an area of the second light-extraction region is between 0.25 and 0.45. | ||
| 地址 | Hsinchu TW | ||