Methods for forming interconnections between top electrodes in memory cells by a two-step chemical-mechanical polishing (CMP) process

摘要

Memory cell array architectures and methods of forming the same are provided. An example method for forming an array of memory cells can include forming a plurality of vertical structures each having a switch element in series with a memory element in series with a top electrode, and forming an interconnection conductive material between the respective top electrodes of the plurality of vertical structures. The interconnection conductive material is etched-back and chemical-mechanical polished (CMPed). A conductive line is formed over the interconnection conductive material after CMPing the interconnection conductive material.

主权项

1. A method for forming an array of memory cells, comprising:
forming a plurality of vertical structures each having a switch element in series with a memory element in series with a top electrode; forming an interconnection conductive material between the respective top electrodes of the plurality of vertical structures; etching-back the interconnection conductive material; forming a dielectric material over the interconnection conductive material after etching-back and over a reference level adjacent the plurality of vertical structures; chemical mechanical polishing (CMPing) the dielectric material to remove a first portion of the dielectric material from over the interconnection conductive material while keeping a second portion of the dielectric material over the reference level; and forming a conductive line over the interconnection conductive material after etching-back the interconnection conductive material.