MAGNETIC MEMORY DEVICES AND METHODS FOR FORMING THE SAME

摘要

Provided are a magnetic memory device capable of preventing a change of electromagnetic characteristics of a magnetic tunnel junction pattern due to a contact plug, and a forming method thereof. The magnetic memory device comprises: a contact plug including a first crystalline region, and an amorphous region disposed on the first crystalline region; and a magnetic tunnel junction pattern disposed on the amorphous region of the contact plug.