Semiconductor structure and manufacturing method thereof

摘要

A semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; and a stress memorization technology (SMT) sidewall spacer over a sidewall of the gate stack. The gate stack includes a gate dielectric layer over the semiconductor substrate and a gate electrode over the gate dielectric layer. The SMT sidewall spacer provides a stress for a channel region beneath the gate stack.

主权项

1. A method for manufacturing a semiconductor structure, comprising:
forming a gate stack over a semiconductor substrate and a source/drain region adjacent to the gate stack; forming a capping layer over the gate stack and the semiconductor substrate; implanting ions on the capping layer; annealing the capping layer and the semiconductor substrate so as to recrystallize and deform a gate electrode of the gate stack, wherein the deformed gate electrode transfers the stress into a channel region beneath the gate stack; and removing a portion of the capping layer, thereby forming a sidewall spacer around the gate stack.