| 摘要 |
<p>PURPOSE: To improve the productivity of a narrow base film, when a base film of continuous length is cut for each device region and many film devices are obtained. CONSTITUTION: Firstly, main sprocket holes 5 are formed on both end portions in the width direction of a wide base film 1 having four device regions 4 surrounded by alternate long and short dash lines in the width direction. Subsprocket holes 6 are formed on both outer sides in each of the width diections of the part corresponding to each of the device regions 4. Secondly, a wiring forming process, a bonding process of a semiconductor chip 12, etc., are performed, while the wide base film 1 is carried via the main sprocket holes 5. Thirdly, the wide base film 1 is cut along full lines shown by a sign C, and so four narrow base films 20 are obtained. Since the wiring forming process and the like are performed in the state of the wide base film 1, the wiring forming process and the like for the four narrow base films 20 can be performed at the same time.</p> |
