| 发明名称 | Alignment mark formation method and semiconductor device | ||
| 摘要 | According to one embodiment, at first, a first pattern is formed to an insulating film. Then, a first transparent film is formed on a region of the insulating film, which includes a position where the first pattern is formed. Thereafter, an opaque film which is opaque to light within a visible light region is formed on an entire surface of the insulating film. Then, a second transparent film is generated by selectively oxidizing part of the opaque film in contact with the first transparent film. | ||
| 申请公布号 | US9502357(B2) | 申请公布日期 | 2016.11.22 |
| 申请号 | US201514799787 | 申请日期 | 2015.07.15 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Hagio Yoshinori |
| 分类号 | H01L23/544;H01L21/32;H01L21/02;H01L21/768;H01L23/528 | 主分类号 | H01L23/544 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. An alignment mark formation method comprising: forming a first pattern to an insulating film; forming a first transparent film on a region of the insulating film, which includes a position where the first pattern is formed; forming an opaque film, which is opaque to light within a visible light region, on an entire surface of the insulating film; and generating a second transparent film by selectively oxidizing part of the opaque film in contact with the first transparent film. | ||
| 地址 | Minato-ku JP | ||