EXPOSURE MASK, METHOD FOR FORMING RESIST PATTERN AND METHOD FOR FORMING THIN FILM PATTERN

摘要

PROBLEM TO BE SOLVED: To provide an exposure mask that can improve resolution.

SOLUTION: The exposure mask 10 has one slit type main transmitting region 1 and three sets of slit type sub-transmitting regions 2 arranged in series opposing to each other across the main transmitting region 1. By exposing and developing a resist film by using the exposure mask 10, the exposure width of the resist film is reduced because the light intensity contrast is enhanced at the end in the slit width direction of the main transmitting region 1 compared to a mask having at most two sets of sub-transmitting regions 2.

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