| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of more surely cutting a semiconductor substrate.SOLUTION: A method for manufacturing a semiconductor device comprises: a first step of forming a gettering region 18 for capturing an impurity inside a semiconductor substrate 2 by modifying the inside of the semiconductor substrate 2 irradiating the semiconductor substrate 2 with a laser beam L1; a second step of forming a cutting origin region 8 at a position on a surface 2a side rather than the gettering region 18 by irradiating the semiconductor substrate 2 with a laser beam L2 along a scheduled cutting line 5 which is set to run between the positions at which adjacent functional elements 25 are formed; and a third step of obtaining a plurality of semiconductor devices 20 including one functional element 25 by cutting at least the semiconductor substrate 2 per functional element 25 along the scheduled cutting line 5. |
