发明名称 |
MANUFACTURING METHOD OF SINGLE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a single crystal which has low resistivity and in which occurrence of dislocation is suppressed.SOLUTION: A manufacturing method of a single crystal 6 includes: a shoulder part forming step of forming a shoulder part 62 of the single crystal 6; and a straight trunk part forming step of forming a straight trunk part 63 of the single crystal 6. In the shoulder forming step, the formation of the shoulder part 62 is started in a state satisfying a relationship 0.4<H/R<0.78, where H (mm) is a distance from the lowermost part of the inside of a crucible 31 to a surface 41A of a doped melt 41 and R (mm) is a radius of the surface 41A of the doped melt 41.SELECTED DRAWING: Figure 3 |
申请公布号 |
JP2016121032(A) |
申请公布日期 |
2016.07.07 |
申请号 |
JP20140261122 |
申请日期 |
2014.12.24 |
申请人 |
SUMCO CORP |
发明人 |
NARUSHIMA YASUTO;KUBOTA TOSHIMICHI;UTSU MASAYUKI |
分类号 |
C30B15/04;C30B15/20;C30B29/06 |
主分类号 |
C30B15/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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