发明名称 MANUFACTURING METHOD OF SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a single crystal which has low resistivity and in which occurrence of dislocation is suppressed.SOLUTION: A manufacturing method of a single crystal 6 includes: a shoulder part forming step of forming a shoulder part 62 of the single crystal 6; and a straight trunk part forming step of forming a straight trunk part 63 of the single crystal 6. In the shoulder forming step, the formation of the shoulder part 62 is started in a state satisfying a relationship 0.4<H/R<0.78, where H (mm) is a distance from the lowermost part of the inside of a crucible 31 to a surface 41A of a doped melt 41 and R (mm) is a radius of the surface 41A of the doped melt 41.SELECTED DRAWING: Figure 3
申请公布号 JP2016121032(A) 申请公布日期 2016.07.07
申请号 JP20140261122 申请日期 2014.12.24
申请人 SUMCO CORP 发明人 NARUSHIMA YASUTO;KUBOTA TOSHIMICHI;UTSU MASAYUKI
分类号 C30B15/04;C30B15/20;C30B29/06 主分类号 C30B15/04
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