发明名称 COMPOSITE VAPOR DEPOSITING MATERIAL AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To provide a vapor depositing material capable of obtaining a vapor deposition film in which the material high in vapor pressure is rich in the compsn. in the initial stage of the vapor deposition and the material low in vapor pressure is rich in the compsn. in the terminal stage of the vapor deposition by one time vapor depositing operation. SOLUTION: This material has a composite structure provided with an aluminum substrate 1 and metallic particles 2 dispersed into the axial region 4 of the aluminum substrate, in which the aluminum substrate is composed of metal of high vapor pressure, and the metallic particles are composed of metal of low vapor pressure, and the metallic particles are composed of at least one material selected from chromium, cobalt, molybdenum, manganese, niobium, tantalum, tungsten, beryllium, nickel, tin, iron, lead, silicon, titanium, vanadium, platinum and carbon.
申请公布号 JP2000336471(A) 申请公布日期 2000.12.05
申请号 JP20000075661 申请日期 2000.03.17
申请人 HITACHI METALS LTD 发明人 FURUICHI SHINJI;TAKASHIMA SHIGETOSHI
分类号 C23C14/24;(IPC1-7):C23C14/24 主分类号 C23C14/24
代理机构 代理人
主权项
地址