| 发明名称 |
NONVOLATILE MEMORY AND METHOD OF DRIVING NONVOLATILE MEMORY |
| 摘要 |
<p>A memory cell comprises a MOS transistor including a source region (5), a drain region (6) and a gate electrode (4); ferroelectric film (2) formed on insulating film (3) over the source region of the MOS transistor; and an electrode (1) formed on the ferroelectric film. The memory cell is formed of fewer elements, while avoiding the destruction and disturbance of retrieved data. <IMAGE></p> |
| 申请公布号 |
EP1244144(A1) |
申请公布日期 |
2002.09.25 |
| 申请号 |
EP20000981699 |
申请日期 |
2000.12.13 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SHIMADA, YASUHIRO |
| 分类号 |
H01L21/8247;H01L27/115;G11C11/22;H01L21/02;H01L21/336;H01L21/8246;H01L27/10;H01L27/105;H01L29/423;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8247 |
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