FIELD EFFECT TRANSISTORS INCLUDING FIN STRUCTURES WITH DIFFERENT DOPED REGIONS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME

摘要

Field effect transistors are provided. According to the field effect transistor, a source region and a drain region are provided on a substrate and a fin portion is provided to protrude from the substrate. The fin portion connects the source region and the drain region to each other. A gate electrode pattern is disposed on the fin portion and extends to cross over the fin portion. A gate dielectric layer is disposed between the fin portion and the gate electrode pattern. A semiconductor layer is disposed between the fin portion and the gate dielectric layer. The semiconductor layer and the fin portion have dopant-concentrations different from each other, respectively.

主权项

1. A Field Effect Transistor (FET) structure, comprising:
a substrate; a device isolation layer on the substrate; a fin structure protruding upward from the substrate through the device isolation layer, the fin structure being doped with a first concentration of impurities; and a semiconductor layer between a surface of the substrate and a lower surface of the device isolation layer that faces the surface of the substrate, the semiconductor layer extending between the device isolation layer and the fin structure, the semiconductor layer being doped with a second concentration of impurities that is different from the first concentration of impurities.