| 摘要 |
PROBLEM TO BE SOLVED: To stably output internal power supply voltage in comparison with the conventional technology without significantly increasing power consumption even in a semiconductor memory for high-speed data reading-out like DDR.SOLUTION: An internal power supply voltage auxiliary circuit for an internal power supply voltage generation circuit including a differential amplifier outputting from an output terminal control voltage indicating a comparison result obtained by comparing internal power supply voltage to be supplied to a load circuit with prescribed reference voltage and a drive transistor outputting the internal power supply voltage to the load circuit via an internal power supply line by driving external power supply voltage according to the control voltage, and adjusting the internal power supply voltage to be the reference voltage, comprises: a timing detection circuit which generates a detection signal by detecting change in a data signal to output it; and an internal power supply voltage auxiliary supply circuit which supplies a current to the load circuit in an auxiliary manner on the basis of the detection signal.SELECTED DRAWING: Figure 1 |
