| 摘要 |
PROBLEM TO BE SOLVED: To align an organic semiconductor layer without damaging the organic semiconductor layer by rubbing when the organic semiconductor having molecular orientation, and to provide a method of aligning the organic semiconductor layer without losing flatness of an interface between an insulating film and the organic semiconductor layer at rubbing of the insulating film. SOLUTION: In manufacturing of the organic semiconductor device, a second substrate in which an alignment layer is formed is so provided that the organic semiconductor layer contacts the alignment layer, to a first substrate comprising a gate electrode, a gate insulator layer, a source electrode, a drain electrode, and the organic semiconductor layer. The organic semiconductor layer is heated, or quenching or annealing is applied as well, to precisely align the organic semiconductor layer. COPYRIGHT: (C)2006,JPO&NCIPI
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