发明名称 |
Plasma processing apparatus |
摘要 |
Provided is a plasma processing apparatus capable of extending an etching parameter to reduce charge-up shape anomalies in dry etching and to enhance etching performance such as selectivity, uniformity, processability or the like. A microwave is controlled to be modulated in frequency and is introduced into a chamber. An ECR face is moved between two positions according to the frequency of the microwave.
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申请公布号 |
US6156152(A) |
申请公布日期 |
2000.12.05 |
申请号 |
US19970958986 |
申请日期 |
1997.10.28 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OGINO, SATOSHI;YONEKURA, KAZUMASA;KIMURA, HAJIME;SAKAMORI, SHIGENORI |
分类号 |
H05H1/46;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):C23F1/02 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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