SELECTIVE BLOCKING DIELECTRIC FORMATION IN A THREE-DIMENSIONAL MEMORY STRUCTURE

摘要

A plurality of blocking dielectric portions can be formed between a memory stack structure and an alternating stack of first material layers and second material layers by selective deposition of a dielectric material layer. The plurality of blocking dielectric portions can be formed after removal of the second material layers selective to the first material layers by depositing a dielectric material on surfaces of the memory stack structure while avoiding deposition on surfaces of the first material layers. A deposition inhibitor material layer or a deposition promoter material layer can be optionally employed. Alternatively, the plurality of blocking dielectric portions can be formed on surfaces of the second material layers while avoiding deposition on surfaces of the first material layers after formation of the memory opening and prior to formation of the memory stack structure. The plurality of blocking dielectric portions are vertically spaced annular structures.