Dual depth trench termination method for improving cu-based interconnect integrity

摘要

A trench is formed in a low K dielectric (100) over a plurality of vias (120) also formed in the low K dielectric layer (100). The vias are separated by a distance of less than X V and the edge of the trench is greater than X TO from the edge ± of the via closest to the edge of the trench. The trench and vias are subsequently filled with copper (150), (160) to form the interconnect line.