| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface treatment method, in which an oxide film generated inside fine contact holes, can be removed efficiently through dry etching, and to provide an apparatus thereof. SOLUTION: An article W to be treated having an oxide film generated on the surface is carried into a treating vessel 10 sustained under a vacuum state; then, a mixture gas of N<SB>2</SB>and H<SB>2</SB>is introduced into a plasma generation section 30 and then its plasma is generated and respective activated gas species are formed. A flow of activated gas species is directed toward the article W and is added with NF<SB>3</SB>gas, to form an activated gas. The article W is cooled down to a predetermined temperature or lower by a cooling means 22 and is exposed to the activated NF<SB>3</SB>gas and reacted therewith. Consequently, the oxide film is degenerated, and a reactive film is formed on the surface of the article W. Subsequently, the supply of N<SB>2</SB>, H<SB>2</SB>and NF<SB>3</SB>gases is stopped and the article W is heated up to a predetermined temperature by a heating means 19 in order to remove the reactive film by sublimation. COPYRIGHT: (C)2008,JPO&INPIT
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