发明名称 |
Gas Injection System For Chemical Vapor Deposition Using Sequenced Valves |
摘要 |
A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor. |
申请公布号 |
US2016168710(A1) |
申请公布日期 |
2016.06.16 |
申请号 |
US201615050728 |
申请日期 |
2016.02.23 |
申请人 |
Veeco Instruments, Inc. |
发明人 |
Quinn William E.;Armour Eric A. |
分类号 |
C23C16/52;C23C16/18;C23C16/455 |
主分类号 |
C23C16/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Plainview NY US |