发明名称 Gas Injection System For Chemical Vapor Deposition Using Sequenced Valves
摘要 A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor.
申请公布号 US2016168710(A1) 申请公布日期 2016.06.16
申请号 US201615050728 申请日期 2016.02.23
申请人 Veeco Instruments, Inc. 发明人 Quinn William E.;Armour Eric A.
分类号 C23C16/52;C23C16/18;C23C16/455 主分类号 C23C16/52
代理机构 代理人
主权项
地址 Plainview NY US