| 发明名称 |
DEVICE MANUFACTURING METHOD |
| 摘要 |
A device manufacturing method according to an embodiment includes forming a film on the side of a second surface of a substrate having a first surface and the second surface, cutting the substrate, cutting the film, and injecting particles onto at least one of a first cut portion formed by the cutting of the substrate and a second cut portion formed by the cutting of the film, to process the at least one of the first cut portion or the second cut portion. |
| 申请公布号 |
US2016218037(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201514927211 |
申请日期 |
2015.10.29 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Takano Masamune |
| 分类号 |
H01L21/768;H01L21/78 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device manufacturing method comprising:
forming a film on a substrate having a first surface and a second surface, the film being formed on the second surface side of the substrate; cutting the substrate; cutting the film; and injecting particles onto at least one of a first cut portion formed by the cutting of the substrate and a second cut portion formed by the cutting of the film, to process the at least one of the first cut portion and the second cut portion. |
| 地址 |
Tokyo JP |
