发明名称 THYRISTOR WITH IMPROVED PLASMA SPREADING
摘要 There is provided a thyristor having emitter shorts, wherein in an orthogonal projection onto a plane parallel to a first main side (202), a contact area covered by an electrical contact of a first electrode layer (214) with a first emitter layer (206) and the emitter shorts (228) includes areas in the shape of lanes (250A-250D), in which an area coverage of the emitter shorts (228) is less than the area coverage of emitter shorts (228) in the remaining area of the contact area, wherein the area coverage of the emitter shorts (228) in a specific area is the area covered by the emitter shorts (228) in that specific area relative to the specific area. The thyristor of the invention exhibits a fast turn-on process even without complicated amplifying gate structure.
申请公布号 WO2016193078(A1) 申请公布日期 2016.12.08
申请号 WO2016EP61735 申请日期 2016.05.25
申请人 ABB SCHWEIZ AG 发明人 BELLINI, Marco;VOBECKY, Jan;COMMIN, Paul
分类号 H01L29/08;H01L29/06;H01L29/74 主分类号 H01L29/08
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