HIGH PERFORMANCE RADIO FREQUENCY SWITCH

摘要

A HEMT cell includes two or more gallium nitride (“GaN”) high-electron-mobility transistor (“HEMT”) devices electrically connected in series with each other. The HEMT cell includes a HEMT cell drain, a HEMT cell source, and a HEMT cell gate. The HEMT cell drain connects with the drain of a first GaN HEMT device in the series. The HEMT cell source connects with the source of a last GaN HEMT device in the series. The HEMT cell gate connects to a first two-dimensional electron gas (“2DEG”) gate bias resistor that connects with the gate of the first GaN HEMT device. The HEMT cell gate connects to a second 2DEG gate bias resistor that connects with the gate of the second GaN HEMT device. The first and second 2DEG gate bias resistors are located in a 2DEG layer of the HEMT cell. A multi-throw RF switch is also disclosed.

主权项

1. A Unit HEMT cell, comprising:
a gallium nitride (hereinafter “GaN”) layer; a two-dimensional electron gas (2DEG) layer disposed on the GaN layer; a gate dielectric layer disposed on the 2DEG layer; a GaN high-electron-mobility transistor (hereinafter “HEMT”) device, the GaN HEMT device having a gate disposed on the gate dielectric layer, a drain adjacent to one side of the gate and a source adjacent to an opposing side of the gate, the GaN HEMT device disposed on and including the GaN layer, and the GaN HEMT device having its gate connected to one contact of a 2DEG gate bias resistor, the 2DEG gate bias resistor disposed in the 2DEG layer; a HEMT cell gate electrically connected the other contact of the 2DEG gate bias resistor; a HEMT cell drain electrically connected to one contact of a 2DEG linearity resistor and to the drain of the GaN HEMT device; and a HEMT cell source electrically connected to the other contact of the 2DEG linearity resistor and to the source of the GaN HEMT device, the 2DEG linearity resistor being disposed in the 2DEG layer.