| 摘要 |
1. A signal translating circuit comprising, AN INSULATED-GATE FIELD-EFFECT TRANSISTOR OF THE TYPE HAVING GATE, SOURCE AND DRAIN ELECTRODES FORMED ON A SEMICONDUCTOR SUBSTRATE, CIRCUIT MEANS COUPLED BETWEEN SAID GATE AND SOURCE ELECTRODES FOR ESTABLISHING AN OPERATING CHARACTERISTIC OF SAID TRANSISTOR, INPUT CIRCUIT MEANS COUPLED BETWEEN SAID SUBSTRATE AND SAID SOURCE ELECTRODE FOR APPLYING SIGNALS TO BE TRANSLATED, AND OUTPUT CIRCUIT MEANS COUPLED BETWEEN SAID SOURCE AND DRAIN ELECTRODES FOR DEVELOPING OUTPUT SIGNALS CORRESPONDING TO THOSE APPLIED BETWEEN SAID SUBSTRATE AND SAID SOURCE ELECTRODE. |
