High-gain wide bandgap darlington transistors and related methods of fabrication

摘要

A packaged power electronic device includes a wide bandgap bipolar driver transistor having a base, a collector, and an emitter terminal, and a wide bandgap bipolar output transistor having a base, a collector, and an emitter terminal. The collector terminal of the output transistor is coupled to the collector terminal of the driver transistor, and the base terminal of the output transistor is coupled to the emitter terminal of the driver transistor to provide a Darlington pair. An area of the output transistor is at least 3 times greater than an area of the driver transistor in plan view. For example, an area ratio of the output transistor to the driver transistor may be between about 3:1 to about 5:1. Related devices and methods of fabrication are also discussed.

主权项

1. A packaged power electronic device, comprising:
a bipolar driver transistor comprising a wide bandgap semiconductor material and having a driver base terminal, a driver collector terminal, and a driver emitter terminal; and a bipolar output transistor comprising a wide bandgap semiconductor material and having an output base terminal, an output collector terminal, and an output emitter terminal, wherein the output collector terminal is coupled to the driver collector terminal, and wherein the output base terminal is coupled to the driver emitter terminal to provide a Darlington pair, wherein a blocking voltage of the packaged power electronic device is greater than about 5 kilovolts (kV).