| 摘要 |
PURPOSE:To reduce the quantity of both epitaxial growth and grinding and to largely reduce a manufacturing time by forming a recession on the surface of a semiconductor substrate and by forming an island region for forming an element by the epitaxial growth in the recession using the single crystal substrate which is formed with a dielectric insulating separation layer to a certain depth from the surface of the substrate as a supporter. CONSTITUTION:(a) A recession 2a is formed by selectively etching the surface of a single crystal semiconductor substrate 1, the width of the recession 2a determines the width of an island region and an oxygen ion is implanted to a required depth. (b) An ion-implanted layer is changed to an insulation film layer 3 by heat treatment and a perfect insulating separation film layer is formed. (c) A single crystal silicon layer 4 is epitaxially grown by vapor phase growth on a single crystal layer 1a a little thicker than the depth of the recession 2a. (d) The surface of the single crystal silicon layer 4 is ground and removed until the insulation film layer 3 is exposed and plural single crystal island regions 4a separated by the insulating film layer 3 are made to be formed. This reduces the quantity of both the epitaxial growth and the grinding and largely reduces the times of both of the processes.
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