发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To prevent a wiring layer from being disconnected and to prevent cavities from being generated in a passivation film, by forming the wiring layer so that its upper surface is identical with that of an insulating layer under the passivation film. CONSTITUTION:A wiring layer 14 is formed on prescribed portions of insulating layers 2 to 4. This wiring layer 14 is buried into wiring recessed parts such as contact holes which are used to be in contact with a N<+> region 10 and a wiring path 5. Namely, the wiring layer 14 is made to fill the wiring recessed parts of the insulating layers 2 to 4, and besides its upper surface is made identical with that of the insulating layer 4. A passivation film 8 is piled on both the insulating layer 4 and the wiring layer 14 whose upper surfaces are made identical with each other. Since the upper surface of the wiring layer 14 buried into the insulating layer is thus identical with that of the insulating layer 4 under the passivation film 8 and hence no projected parts exist, no stress is exerted when molding of resin and plasma formation of a silicon nitride film are performed. Accordingly the wiring layer can be prevented from being disconnected.
申请公布号 JPS63244859(A) 申请公布日期 1988.10.12
申请号 JP19870079182 申请日期 1987.03.31
申请人 TOSHIBA CORP 发明人 ARAKI TOMOKAZU;TAKESHITA YUJI
分类号 H01L21/31;H01L21/3205 主分类号 H01L21/31
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