| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a high intensity III nitride semiconductor device by forming a barrier layer comprising polisilicon Si and a buffer layer comprising a III-V compound semiconductor crystal containing boron. SOLUTION: An undoped BP buffer layer 102 is formed on a poly-S layer 101a formed on an Si substrate 101, temperature of the Si substrate 101 is then lowered to convert the surface of the buffer layer 102 into BP0.97N0.03 layer 102a, and an Si doped n-type gallium nitride layer is formed thereon as a lower clad layer 103 followed by formation of an n-type Ga0.88In0.12N light emitting layer 104 of multiphase structure. An upper clad layer 105 of magnesium doped p-type aluminum nitride/gallium mixed crystal is further formed thereon and a pn junction double heterostructure light emitting part 106 is fabricated along with the clad layer 103 and the light emitting layer 104 before an n-type ohmic electrode 107 and a p-type ohmic electrode 108 are formed. Since continuous buffer layer and light emitting layer can be formed on the Si substrate, a III nitride semiconductor optical device having good rectification characteristics and high emission intensity can be fabricated.</p> |
