| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma film forming device capable of forming high density plasma by installing a substrate holder, a high frequency electrode facing the substrate holder, and a pair of high frequency electrodes on the sides of a space between them within a film forming chamber. SOLUTION: A film forming chamber 11 is exhausted with an exhaust means 16, and desirable gas is introduced into the chamber 11 from a gas pipe 17. High frequency electric power (frequency f1, phaseω1) is applied to a high frequency electrode 14 from a high frequency power source 18, and glow discharge (plasma) 19 of gas containing a desired element is generated in the space between a substrate holder 13 and the electrode 14. High frequency electric powers (f2,ω2) and (f3,ω3) are applied to a pair of high frequency electrodes 15a, 15b from power sources 20, 21 respectively. The relation of electric power is specified in f1=f2=f3, andω1≠ω2≠ω3, or f1≠f2=f3, andω2≠ω3. Charged particles of the plasma 19 vibrate right and left, increase probability of collision against neutral particles, and high density plasma is formed.
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