| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide nitride LED in which a metal having sufficient reflectivity of visible (green) to near-ultraviolet wavelength regions with respect to light is used as the material of a p-side electrode and emission efficiency is improved. <P>SOLUTION: Nitride LED has a characteristic configuration where a p-side contact layer which is formed of an n-type nitride semiconductor and has thickness of 15 nm or below is formed on the surface of a p-type nitride semiconductor layer, and the p-side electrode which is brought into contact with the p-side contact layer on a reflection layer formed of Al is installed on it. The p-side electrode which is thus formed shows low contact resistance to a practical degree as the p-side electrode of nitride LED, and Al has a high reflection factor in the visible to near-ultraviolet wavelengths (reflection factor of an ideal mirror formed of Al exceeds 90% with respect to light with a wavelength of 400 nm, for example). Thus, it has effect for efficiently reflecting light caused in the active layer and improving emission efficiency of nitride LED. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
