| 摘要 |
PURPOSE:To align the shape of an N-type single crystal island and the shape of a P-type single-crystal island about the same degree, by providing a mask for the N-type single crystal island at the inner side, performing epitaxial growing, and effectively expanding a single crystal silicon region. CONSTITUTION:An N-type single crystal substrate 1 is masked by a silicon oxide film. Anisotropic etching is performed by alkali solution, and an N-type single crystal island 2 is formed. N-type impurity ions are implanted in the entire surface, and an N-type single-crystal-island embedded layer 5 is formed. The N-type single crystal layer 2 is masked by a silicon film 6. Then the N-type single-crystal-island embedded layer 5 other than the N-type single crystal island 2 is removed by anisotropic etching by the alkali solution. A P-type single crystal silicon layer 7 is grown on the exposed surface of the substrate so that the layer is thicker than the N-type single crystal island 2. A polycrystalline silicon layer 9 is deposited on the surface masked by the silicon oxide film 6. Then the P-type single crystal silicon layer 7 is ground to about the height of the N-type single crystal island 2. The part is masked by a silicon oxide film 10. Anisotropic etching is carried out by the alkali solution, and a P-type single crystal island 11 is formed. |
