发明名称 Honeycomb structure
摘要 A honeycomb structure including a tubular honeycomb structure portion having: porous partition walls with which a plurality of cells extending from one end surface to the other end surface are formed to partition through channels of a fluid; and an outer peripheral wall positioned on an outermost periphery, an electrical resistivity of the partition walls is from 1 to 200 Ωcm, at least a part of the outer peripheral wall is formed by a low Young's modulus portion configured to have a Young's modulus lower than that of the partition walls, and a ratio of the Young's modulus of the low Young's modulus portion to the Young's modulus of the partition walls is from 2 to 95%. Provided is a honeycomb structure which is a catalyst carrier and also functions as a heater when a voltage is applied thereto and which has an excellent heat shock resistance.
申请公布号 US9468921(B2) 申请公布日期 2016.10.18
申请号 US201313912238 申请日期 2013.06.07
申请人 NGK Insulators, Ltd. 发明人 Kondo Yoshimasa;Watanabe Tsuyoshi;Hosoi Yusuke;Kaneda Atsushi;Nagareda Kazumi
分类号 H05B3/10;B01J35/04;F01N3/20;F01N3/28;H05B3/42;B01D46/24;B01D53/94 主分类号 H05B3/10
代理机构 Burr & Brown, PLLC 代理人 Burr & Brown, PLLC
主权项 1. A honeycomb structure comprising a tubular honeycomb structure portion including: porous partition walls with which a plurality of cells extending from one end surface to the other end surface are formed to partition through channels of a fluid, an outer peripheral wall positioned only on an outermost periphery of the porous partition walls, and a pair of electrode portions arranged in a band-like state in a cell extending direction of the honeycomb structure portion on a side surface of the honeycomb structure portion, wherein an electrical resistivity of the partition walls is from 1 to 200 Ωcm, wherein at least a part of the outer peripheral wall is formed by a low Young's modulus portion configured to have a Young's modulus lower than the Young's modulus of the partition walls, wherein a ratio of the Young's modulus of the low Young's modulus portion to the Young's modulus of the partition walls is from 2 to 95%, and wherein a Young's modulus of the electrode portions is from 0.8 to 30 GPa.
地址 Nagoya JP