PROCEDE DE FORMATION D'UNE COUCHE D'OXYDE D'EPAISSEUR NON-UNIFORME A LA SURFACE D'UN SUBSTRAT DE SILICIUM

摘要

The invention concerns a method comprising steps which consist in: a) implanting in predetermined zones of the substrate an efficient dose of atoms of a species accelerating the substrate oxidation kinetics; and b) growing by oxidation a silicon oxide film with non-uniform thickness on the substrate surface. The invention is useful for producing oxide films for MOS transistor grids.