Small-sized light-emitting diode chiplets and method of fabrication thereof

摘要

Diode includes light emitting region, first metal layer, dielectric layer, and second metal layer. Light emitting diode includes n-type group III-nitride portion, p-type group III-nitride layer, and light emitting region sandwiched between n- and p-type layers. First metal layer may be coupled to p-type III-N portion and plurality of first terminals. First metal layer and p-type III-N portion may have substantially similar lateral size that is smaller than 200 micrometers. A portion of light emitting region and first metal layer may include a single via. Electrically-insulating layer may be coupled to first metal layer and sides of the single via. First terminals may be exposed from electrically-insulating layer. Second metal layer may include second terminal and may be coupled to electrically-insulating layer and to n-type III-N portion through the single via. The thickness of the diode excluding second terminal may be between 2 and 20 micrometers. Other embodiments are described.

主权项

1. A diode chiplet comprising:
an n-type group III-nitride portion, a p-type group III-nitride layer, and a group III-nitride light emitting region sandwiched between the n- and p-type portion; a first metal layer having a bottom side coupled to the p-type III-N layer and a top side including a first terminal, the bottom side of the first metal layer has a lateral size that is substantially equal to the p-type III-N layer, the first terminal being centrally located above the light emitting region; an electrically-insulating layer directly coupled to the top side of the first metal layer, sides of the first metal layer and sides of the p-type III-N layer, sides of the light emitting region, and sides of a first part of the n-type III-N layer, wherein the first terminal and sides of a second part of the n-type III-N layer are exposed from the electrically-insulating layer, wherein the sides of the first part of the n-type III-N layer are respectively (i) parallel to the sides of the second part of the n-type III-N layer and (ii) directly connected in line with the sides of the second part of the n-type III-N layer; and a second metal layer including a second terminal directly coupled to the electrically-insulating layer and to the sides of the second part of the n-type III-N portion, wherein the second metal layer is directly coupled to a top side of a portion of the electrically-insulating layer that is coupled to the top side of the first metal layer, wherein a perimeter of the diode chiplet is smaller than 600 micrometers and a thickness of the diode chiplet excluding the second terminal is between 2 and 20 micrometers.