| 摘要 |
PURPOSE:To obtain the semiconductor light-emitting device with which variable luminous wavelength can be used by a method wherein the forbidden band width is changed apparently by applying the electric field wherein Franz-Keldysh effect will be generated on the active layer of the semiconductor light-emitting element. CONSTITUTION:A P type electrode 26 and an N type electrode 27 are formed on a wafer having an N<+> type substrate 21 whereon an N<+> type InP buffer layer 22, a non-doped InGaAs active layer 23, a P type InP clad layer 24 and a P type InGaAs contact layer 25 are epitaxially grown in liquid phase successively. Then plasma CVD silicon nitride insulating films 28a and 28b are formed on the mesa-etching surface containing the end part of the active layer 23 and a semiconductor light-emitting element, having Au electrodes 29a and 29b, is formed on said films 28a and 28b. Then, electric field is added to the active layer 23 when a DC power source 30 is connected in-between electrodes 29a and 29b. If said electric field is in excess of 105V/cm, Franz-Keldysh effect is generated, and the forbidden band width of the active layer 2e is reduced apparently to the degree of DELTAE. |
