发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
When an oxide semiconductor film is microfabricated, with the use of a hard mask, unevenness of a side surface of the oxide semiconductor film can be suppressed. Specifically, a semiconductor device comprises an oxide semiconductor film over an insulating surface; a first hard mask and a second hard mask over the oxide semiconductor film; a source electrode over the oxide semiconductor film and the first hard mask; a drain electrode over the oxide semiconductor film and the second hard mask; a gate insulating film over the source electrode and the drain electrode; and a gate electrode overlapping with the gate insulating film and the oxide semiconductor film, and the first and second hard masks have conductivity. |
申请公布号 |
US2016359050(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
US201615244019 |
申请日期 |
2016.08.23 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
SASAGAWA Shinya;KURATA Motomu |
分类号 |
H01L29/786;H01L29/66;H01L27/12 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |