Dielectric thin films.

摘要

A high dielectric constant thin film deposited on a substrate can be used to form a capacitor. The thin film is composed of a mixture of a tantalum oxide and a titanium oxide wherein the ratio of titanium (Ti) to tantalum (Ta) is in the range of 0.1 to 4 atomic percent.

The thin film is deposited on the substrate by chemical vapour deposition, for example using a tantalum alkoxide and a titanium alkoxide.

A thin film of this type has a high dielectric strength as well as a high dielectric constant.