MULTI-FIN FINFET DEVICE INCLUDING EPITAXIAL GROWTH BARRIER ON OUTSIDE SURFACES OF OUTERMOST FINS AND RELATED METHODS

摘要

A multi-fin FINFET device may include a substrate and a plurality of semiconductor fins extending upwardly from the substrate and being spaced apart along the substrate. Each semiconductor fin may have opposing first and second ends and a medial portion therebetween, and outermost fins of the plurality of semiconductor fins may comprise an epitaxial growth barrier on outside surfaces thereof. The FINFET may further include at least one gate overlying the medial portions of the semiconductor fins, a plurality of raised epitaxial semiconductor source regions between the semiconductor fins adjacent the first ends thereof, and a plurality of raised epitaxial semiconductor drain regions between the semiconductor fins adjacent the second ends thereof.

主权项

1. A device, comprising:
a substrate having a surface; a plurality of first fins formed on and extending from the surface of the substrate; a first gate structure formed on the plurality of first fins; a plurality of first raised source regions formed on the surface of the substrate and between ones of the plurality of first fins; and a plurality of first raised drain regions formed on the surface of the substrate and between ones of the plurality of first fins, the plurality of first raised drain regions being separated from the plurality of first raised source regions by the first gate structure.