发明名称 |
Ferroelectric random access memory and its operating method |
摘要 |
A ferroelectric memory device in which an imprint is prevented, and a method of operating the ferroelectric memory device to prevent its characteristics from deteriorating due to an imprint. The ferroelectric memory device includes a sense amplifier having first and second transistors which connect first and third sub-bit lines to a ground in accordance with a sense amplifier control signal, third and fourth transistors which connect the first sub-bit line with a fourth sub-bit line and further connect the third sub-bit line with a second sub-bit line in accordance with a first switching control signal, and fifth and sixth transistors which connect the first sub-bit line with the second sub-bit line and further connect the third sub-bit line with the fourth sub-bit line in accordance with a second switching control signal.
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申请公布号 |
US6411540(B1) |
申请公布日期 |
2002.06.25 |
申请号 |
US20000644047 |
申请日期 |
2000.08.23 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
ASHIKAGA KINYA |
分类号 |
G11C14/00;G11C11/22;(IPC1-7):G11C11/22 |
主分类号 |
G11C14/00 |
代理机构 |
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主权项 |
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地址 |
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