| 摘要 |
A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.
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