| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing carbon nanotubes by which the carbon nanotubes can be grown in a desired direction within a plane parallel to a surface of a semiconductor substrate without arranging metal electrodes for generating an electric field in the vicinity of each catalyst metal part on an insulating layer provided on a surface of the semiconductor substrate. SOLUTION: When the carbon nanotubes 5 are grown between a couple of catalyst metal parts 4, 4 formed at an interval on the insulating layer 2 provided on the surface of the semiconductor substrate 1, the carbon nanotubes 5 are grown between the couple of catalyst metal parts 4, 4 by forming a couple of high concentration impurity diffusion layers 3a, 3b for generating an electric field between the couple of catalyst metal parts 4, 4 on one surface side of the semiconductor substrate 1 before forming the couple of catalyst metal parts 4, 4, and after forming the couple of catalyst metal parts 4, 4, generating an electric field between the couple of catalyst metal parts 4, 4 by applying voltage between the couple of high concentration impurity diffusion layers 3a, 3b, and at the same time, supplying a raw material gas containing carbon onto the surface side of the insulating layer 2. COPYRIGHT: (C)2006,JPO&NCIPI |
