发明名称 ALUMINIUM NITRIDE BASE CERAMICS SUBSTRATE
摘要 PURPOSE:To improve the adhesive property of substrate to a conductor by a method wherein the maximum roughness (Rmax) of ceramics substrate mainly formed of AlN is specified to be Rmax<=10mum. CONSTITUTION:AlN powder with weight % exceeding 95% added to 0.1-5wt% of Y2O3 is formed into a ceramics substrate by means of sintering process of further oxidizing the surface to provide an Al2O3 layer 1-10mum thick making junction with a conductor easier. The surface is further honed with 10<2>-10<3> mesh alundum abrasive grain into maximum roughness Rmax<=10mum. Especially the effective Rmax shell not exceed 5mum for the thick film substrate utilizing Au, Cu and glass etc., 2mum for thin film substrate, 6mum for substrate directly junctioning copper sheet and 10mm for structural substrate. Besides, the thick film substrate shall exceed 2mum since too smooth surface may deteriorate adhesive property.
申请公布号 JPS6184037(A) 申请公布日期 1986.04.28
申请号 JP19840204709 申请日期 1984.09.30
申请人 TOSHIBA CORP 发明人 MIZUNOYA NOBUYUKI;SUGIURA YASUYUKI
分类号 H05K1/03;C04B35/581;C04B35/64;C04B41/00;C04B41/80;H01L23/15 主分类号 H05K1/03
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